MG30V2YS40 2001-02-22 1/5 toshiba gtr module silicon n channel igbt MG30V2YS40 high power switching applications motor control applications the electrodes are isolated from case. high input impedance includes a complete half bridge in one package. enhancement-mode high speed : t f = 1.5s (max.) (i c = 30a) t rr = 0.3s (max.) (i f = 30a) equivalent circuit maximum ratings (ta = 25c) characteristic symbol rating unit collector-emitter voltage v ces 1700 v gate-emitter voltage v ges 20 v dc i c 30 collector current 1ms i cp 60 a dc i f 30 forward current 1ms i fm 60 a collector power dissipation (tc = 25c) p c 500 w junction temperature t j 150 c storage temperature range t stg ? 40 ~ 125 c isolation voltage v isol 4000 (ac 1 min.) v screw torque (terminal / mounting) D 3 / 3 nm jedec D eiaj D toshiba 2-94d1a weight: 202g (typ.) unit: mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in g eneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. 000707 eaa2
MG30V2YS40 2001-02-22 2/5 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i ges v ge = 20v, v ce = 0 D D 50 na collector cut-off current i ces v ce = 1700v, v ge = 0 D D 0.5 ma gate-emitter cut-off voltage v ge (off) i c = 30ma, v ce = 5v 4.0 D 8.0 v collector-emitter saturation voltage v ce (sat) i c = 30a, v ge = 15v D 3.2 4.5 v input capacitance c ies v ce = 10v, v ge = 0, f = 1mhz D 4400 D pf turn-on delay time t d (on) D 0.1 D rise time t r D 0.1 D turn-on time t on D 0.5 D turn-off delay time t d (off) D 0.4 D fall time t f D 0.5 1.5 switching time turn-off time t off inductive load v cc = 900v i c = 30a v ge = 15v r g = 24 ? (note 1) D 1.0 D s forward voltage v f i f = 30 a, v ge = 0 D 3.2 4.5 v reverse recovery time t rr i f = 30 a, v ge = ? 15 v, di / dt = 500 a / s (note 1) D 0.1 0.3 s transistor stage D D 0.25 thermal resistance r th (j-c) diode stage D D 1.0 c / w note 1: switching time and reverse recovery time test circuit & timing chart the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eaa2
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